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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad 2-Input NOR Gate
High-Performance Silicon-Gate CMOS
The MC54/74HC02A is identical in pinout to the LS02. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. * * * * * * Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 A High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A * Chip Complexity: 40 FETs or 10 Equivalent Gates
MC54/74HC02A
J SUFFIX CERAMIC PACKAGE CASE 632-08
1
14
14 1
N SUFFIX PLASTIC PACKAGE CASE 646-06
14 1
D SUFFIX SOIC PACKAGE CASE 751A-03
LOGIC DIAGRAM
A1 B1 A2 B2 A3 B3 A4 B4 2 1 3 5 4 6 8 10 9 11 13 12 PIN 14 = VCC PIN 7 = GND Y4 Y3 Y2 Y=A+B Y1
14 1
DT SUFFIX TSSOP PACKAGE CASE 948G-01
ORDERING INFORMATION MC54HCXXAJ MC74HCXXAN MC74HCXXAD MC74HCXXADT Ceramic Plastic SOIC TSSOP
PIN ASSIGNMENT
Y1 A1 B1 Y2 A2 B2 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC Y4 B4 A4 Y3 B3 A3
FUNCTION TABLE
Inputs A L L H H B L H L H Output Y H L L L
10/95
(c) Motorola, Inc. 1995
3-1
REV 7
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII III II I III I I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I III I I III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I
* Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. Derating -- Plastic DIP: - 10 mW/_C from 65_ to 125_C Ceramic DIP: - 10 mW/_C from 100_ to 125_C SOIC Package: - 7 mW/_C from 65_ to 125_C TSSOP Package: - 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D).
IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS*
MOTOROLA
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
MC54/74HC02A
Symbol
Vin, Vout
Symbol
Symbol
VCC
Vout
Tstg
ICC
Iout
VCC
Vin
PD
TL
VOH
tr, tf
Iin
TA
VIH
VIL
Lead Temperature, 1 mm from Case for 10 Seconds Plastic DIP, SOIC or TSSOP Package Ceramic DIP
Storage Temperature
Power Dissipation in Still Air, Plastic or Ceramic DIP SOIC Package TSSOP Package
DC Supply Current, VCC and GND Pins
DC Output Current, per Pin
DC Input Current, per Pin
DC Output Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Supply Voltage (Referenced to GND)
Input Rise and Fall Time (Figure 1)
Operating Temperature, All Package Types
DC Input Voltage, Output Voltage (Referenced to GND)
DC Supply Voltage (Referenced to GND)
Minimum High-Level Output Voltage
Maximum Low-Level Input Voltage
Minimum High-Level Input Voltage
Parameter
Parameter
Parameter
Vin = VIH or VIL |Iout| 20 A
Vin = VIH or VIL |Iout| |Iout| |Iout|
Vout = 0.1 V or VCC - 0.1 V |Iout| 20 A
Vout = 0.1 V or VCC - 0.1 V |Iout| 20 A
v
v
v
VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V
Test Conditions
- 0.5 to VCC + 0.5
- 0.5 to VCC + 0.5
3-2 - 65 to + 150 - 0.5 to + 7.0 - 55 Min 2.0 Value
v 2.4 mA v 4.0 mA v 5.2 mA
0 0 0
0
50
25
20
260 300
750 500 450
+ 125
1000 500 400
VCC
Max
6.0
VCC V
3.0 4.5 6.0
2.0 4.5 6.0
2.0 3.0 4.5 6.0
2.0 3.0 4.5 6.0
Unit
Unit
mW
mA
mA
mA
_C
_C
_C
ns
V
V
V
V
V
- 55 to 25_C
0.5 0.9 1.35 1.8
1.5 2.1 3.15 4.2
2.48 3.98 5.48
1.9 4.4 5.9
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Guaranteed Limit
v85_C v125C
High-Speed CMOS Logic Data DL129 -- Rev 6 0.5 0.9 1.35 1.8 1.5 2.1 3.15 4.2 2.34 3.84 5.34 1.9 4.4 5.9
v
0.5 0.9 1.35 1.8
1.5 2.1 3.15 4.2
2.20 3.7 5.2 1.9 4.4 5.9
v
Unit
V V V
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High- Speed CMOS Data Book (DL129/D).
High-Speed CMOS Logic Data DL129 -- Rev 6 Symbol Symbol tPLH, tPHL tTLH, tTHL CPD VOL ICC Cin Iin Maximum Input Capacitance Maximum Output Transition Time, Any Output (Figures 1 and 2) Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2) Power Dissipation Capacitance (Per Gate)* Maximum Quiescent Supply Current (per Package) Maximum Input Leakage Current Maximum Low-Level Output Voltage Parameter Parameter Vin = VIH or VIL |Iout| 20 A Vin = VCC or GND |Iout| = 0 A Vin = VCC or GND
* Used to determine the no-load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D).
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Vin = VIH or VIL |Iout| |Iout| |Iout|
v
Test Conditions
3-3
v 2.4 mA v 4.0 mA v 5.2 mA
VCC V
VCC V
2.0 3.0 4.5 6.0
2.0 3.0 4.5 6.0
6.0
6.0
3.0 4.5 6.0
2.0 4.5 6.0
--
- 55 to 25_C
- 55 to 25_C
Typical @ 25C, VCC = 5.0 V
0.1
0.26 0.26 0.26
1.0
0.1 0.1 0.1
10
75 30 15 13
75 30 15 13
Guaranteed Limit
Guaranteed Limit
v85_C v125_C
v85_C v125C
1.0
0.33 0.33 0.33
0.1 0.1 0.1
10
95 40 19 16
95 40 19 16
10
22
MC54/74HC02A
1.0
110 55 22 19
110 55 22 19
0.4 0.4 0.4
0.1 0.1 0.1
10
40
MOTOROLA Unit Unit pF A A pF ns ns V
MC54/74HC02A
tf INPUT A OR B 90% 50% 10% tPLH OUTPUT Y tTLH 90% 50% 10%
tr VCC GND tPHL DEVICE UNDER TEST
TEST POINT OUTPUT CL*
tTHL
* Includes all probe and jig capacitance
Figure 1. Switching Waveforms EXPANDED LOGIC DIAGRAM (1/4 OF THE DEVICE)
A
Figure 2. Test Circuit
Y B
MOTOROLA
3-4
High-Speed CMOS Logic Data DL129 -- Rev 6
MC54/74HC02A
OUTLINE DIMENSIONS
J SUFFIX CERAMIC DIP PACKAGE CASE 632-08 ISSUE Y
-A14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMESNION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY. INCHES MIN MAX 0.750 0.785 0.245 0.280 0.155 0.200 0.015 0.020 0.055 0.065 0.100 BSC 0.008 0.015 0.125 0.170 0.300 BSC 0 15 0.020 0.040 MILLIMETERS MIN MAX 19.05 19.94 7.11 6.23 5.08 3.94 0.50 0.39 1.65 1.40 2.54 BSC 0.38 0.21 4.31 3.18 7.62 BSC 15 0 0.51 1.01
-B1 7
C
L
-TSEATING PLANE
K F G D 14 PL 0.25 (0.010) N
M
M
S
TA
J 14 PL 0.25 (0.010)
M
T
B
S
DIM A B C D F G J K L M N
N SUFFIX PLASTIC DIP PACKAGE CASE 646-06 ISSUE L
14 8 NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01
B
1 7
A F C N H G D
SEATING PLANE
L
J K M
High-Speed CMOS Logic Data DL129 -- Rev 6
3-5
MOTOROLA
MC54/74HC02A
OUTLINE DIMENSIONS
D SUFFIX PLASTIC SOIC PACKAGE CASE 751A-03 ISSUE F
-A-
14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
-B-
1 7
P 7 PL
0.25 (0.010)
M
B
M
G C
R X 45
F
SEATING PLANE
D
14 PL
K
M
M B
S
J
0.25 (0.010)
T
A
S
DIM A B C D F G J K M P R
MILLIMETERS MIN MAX 8.75 8.55 4.00 3.80 1.75 1.35 0.49 0.35 1.25 0.40 1.27 BSC 0.25 0.19 0.25 0.10 7 0 5.80 6.20 0.25 0.50
INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 7 0 0.228 0.244 0.010 0.019
DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948G-01 ISSUE O
14X K REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 --- 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 --- 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_
0.10 (0.004) 0.15 (0.006) T U
S
M
TU
S
V
S
N
2X
L/2
14
8
0.25 (0.010) M
L
PIN 1 IDENT. 1 7
B -U-
N F DETAIL E
0.15 (0.006) T U
S
A -V- J J1
SECTION N-N -W-
C 0.10 (0.004) -T- SEATING
PLANE
D
G
H
DETAIL E
MOTOROLA
3-6
EEE CCC EEE CCC EEE CCC EEE CCC
K K1
High-Speed CMOS Logic Data DL129 -- Rev 6
MC54/74HC02A
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How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com -TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
High-Speed CMOS Logic Data DL129 -- Rev 6
CODELINE
3-7
*MC54/74HC02A/D*
MC54/74HC02A/D MOTOROLA


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